N-CHANNEL POWER MOSFET
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2
N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg
Power MOSFETs...
Description
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2
N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg
Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages
Datasheet − production data
TAB
3 1
D2 PAK
TAB
3 2 1
TO-220
TAB
3 1
DPAK
TAB
IPAK
3
2 1
Figure 1. Internal schematic diagram , TAB
Features
Order codes VDS @ TJmax
RDS(on) max
ID
STB10N60M2 STD10N60M2 STP10N60M2 STU10N60M2
650 V
0.600 Ω 7.5 A
Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected
Applications
Switching applications
Description
AM15572v1
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Order codes STB10N60M2 STD10N60M2 STP10N60M2 STU10N60M2
Table 1. Device summary
Marking
Package
2
D PAK
10N60M2
DPAK TO-220
IPAK
Packaging Tape and reel
Tube
December 2013
This is information on a product in full production.
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Contents
Contents
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . ...
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