N-CHANNEL POWER MOSFET
STB10N60M2, STD10N60M2, STP10N60M2
Datasheet
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a D²PAK, DPAK...
Description
STB10N60M2, STD10N60M2, STP10N60M2
Datasheet
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a D²PAK, DPAK and TO-220 packages
TAB
2 3
1
D²PAK
TAB
TAB
23 1
DPAK
TO-220
3 2 1
D(2, TAB)
G(1)
S(3)
AM01476v1_tab
Features
Order codes VDS @ TJ max. RDS(on) max.
STB10N60M2
STD10N60M2
650 V
0.60 Ω
STP10N60M2
Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected
ID 7.5 A
Package D²PAK DPAK TO-220
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Product status links STB10N60M2 STD10N60M2 STP10N60M2
DS9703 - Rev 4 - January 2021 For further information contact your local STMicroelectronics sales office.
www.st.com
STB10N60M2, STD10N60M2, STP10N60M2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. Pulse l...
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