D2271

2SD2271 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD2271 Motor Drive Applications High-Current Switching Applications Unit: mm High DC current gain: hFE = 500 (min) (VCE = 2 V, IC = 5 A) High breakdown voltage: VCEO (SUS) = 200 V (min) Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 300 200 6 ±12 ±18 1 2.0 30 150 −55 to 150 Unit V V V A A W °C °C Equivalent Circuit Base Collector ≈ 500 Ω ≈ 70 Ω Emitter JEDEC ― JEITA ― TOSHIBA 2-10R1A Weight: 1.7 g (typ.) 1 2004-07-26 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter sustaining voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-collector forward voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CBO VCEO (SUS) hFE (1) hFE (2) VCE (sat) VBE (sat) VECF fT Cob VCB = 300 V, IE = 0 VEB = 6 V, IC = 0 IC = 1 mA, IE = 0 IC = 0.25 A, L = 40 mH VCE = 2 V, IC = 5 A VCE = 2 V, IC = 10 A IC = 10 A, IB = 0.1 A IC = 10 A, IB = 0.1 A IE = 10 A, IB = 0 VCE = 2 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz 2SD2271 Min Ty...