FDD6637_F085

FDD6637_F085 P-Channel PowerTrench® MOSFET FDD6637_F085 P-Channel PowerTrench® MOSFET -35V, -21A, 18mΩ Features „ Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A „ Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A „ Typ Qg(10) = 45nC at VGS = -10V „ High performance trench technology for extremely low rDS(on). „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Inverter „ Power Supplies „ „ December 2010 ©2010 Fairchild Semiconductor Corporation FDD6637_F085 Rev. C 1 www.fairchildsemi.com FDD6637_F085 P-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain to Source Voltage VDS(Avalanche) Drain to Source Avalanche Voltage (maximum) VGS Gate to Source Voltage ID Drain Current Continuous (TC < 155oC, VGS = 10V) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Dreate above 25oC Operating and Storage Temperature Thermal Characteristics (Note 1) Ratings -35 -45 ±25 -21 See Figure 4 61 68 0.46 -55 to + 175 Units V V V A mJ W W/oC oC RθJC RθJA Maximum Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 2.2 40 oC/W oC/W Package Marking and Ordering Information Device Marking Device FDD6637 FDD6637_F085 Package TO-252 Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Off Characteristics Test Conditions Min BVDSS IDSS IGSS Drain to...