FDS4435BZ_F085

FDS4435BZ_F085 P-Channel PowerTrench® MOSFET FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A „ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A „ Extended VGSS range (-25V) for battery applications „ HBM ESD protection level of ±3.8KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Termination is Lead-free and RoHS compliant „ Qualified to AEC Q101 July 2009 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. D D D D Pin 1 SO-8 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25°C Power Dissipation Power Dissipation Single Pulse Avalanche Energy TA = 25°C TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) (Note 4) Ratings -30 ±25 -8.8 -50 2.5 1.0 24 -55 to +150 Units V V A W mJ °C RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note ...