Document
New Product
P-Channel 30-V (D-S) MOSFET
Si4835DDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.018 at VGS = - 10 V 0.030 at VGS = - 4.5 V
ID (A)d - 13 - 10
Qg (Typ.) 22 nC
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested • 100 % UIS Tested
APPLICATIONS
• Load Switches - Notebook PCs - Desktop PCs
S
G
Top View
Ordering Information: Si4835DDY-T1-E3 (Lead (Pb)-free) Si4835DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current Single-Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.1 mH
IS
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit - 30 ± 25
- 13 - 10.5 - 8.7a, b - 7.7a, b - 50 - 4.6 2.0a, b - 20
20 5.6 3.6 2.5a, b 1.6a, b - 55 to 150
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. Based on TC = 25 °C.
t ≤ 10 s Steady State
Document Number: 69953 S09-0136-Rev. B, 02-Feb-09
Symbol RthJA RthJF
Typical 39 18
Maximum 50 22
Unit °C/W
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Si4835DDY
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance
Total Gate Charge
VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 25 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ - 10 V, VGS = - 10 V VGS = - 10 V, ID = - 10 A VGS = - 4.5 V, ID = - 7 A VDS = - 10 V, ID = - 10 A
Ciss Coss Crss
Qg
VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = - 15 V, VGS = - 10 V, ID = - 10 A
Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time
Qgs Qgd Rg td(on)
tr td(off)
tf td(on)
tr td(off)
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A f = 1 MHz
VDD = - 15 V, RL = 3 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω
VDD = - 15 V, RL = 3 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω
TC = 25 °C IS = - 2 A, VGS = 0 V
IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C
Min. - 30 - 1.0 - 30
0.3
Typ.
Max.
Unit
- 31 5.5
0.014 0.0245
23
- 3.0 ± 100
-1 -5
0.018 0.030
V mV/°C
V nA µA A Ω S
1960 380 325 43 22
6 11 1.3 11 13 32 9 44 100 28 15
65 33
2.5 22 25 50 18 70 160 50 30
pF nC Ω
ns
- 0.75 28 20 13 15
- 4.6 - 50 - 1.2 45 40
A
V ns nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 69953 S09-0136-Rev. B, 02-Feb-09
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
I D - Drain Current (A)
ID - Drain Current (A)
60 VGS = 10 V thru 5 V
50
40
30 VGS = 4 V
20
5 4 3 2
10 0 0
0.05
VGS = 3 V
1234 VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
1 0
0
3000
Si4835DDY
Vishay Siliconix
VGS = 125 °C
VGS = 25 °C
VGS = - 55 °C
1234
VGS - Gate-to-Source Voltage (V) Transfer Characteristics
5
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.04
0.03
VGS = 4.5 V
2400 1800
Ciss
0.02 0.01
VGS = 10 V
0.00 0
10 20 30 40 50 60
ID - Drain Current (A) On-Resistance vs. Drain Current
10
ID = 10 A 8
VDS = 10 V VDS = 15 V
6 VDS = 20 V
4
1200
600 Crss
Coss
0 0
1.6
6 12 18 24
VDS - Drain-to-Source Voltage (V) Capacitance
ID = 10 A 1.4
VGS = - 10 V
30
1.2 VGS = - 4.5 V
1.0
R DS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage .