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Si4835DDY Dataheets PDF



Part Number Si4835DDY
Manufacturers Vishay
Logo Vishay
Description P-Channel 30-V (D-S) MOSFET
Datasheet Si4835DDY DatasheetSi4835DDY Datasheet (PDF)

New Product P-Channel 30-V (D-S) MOSFET Si4835DDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V 0.030 at VGS = - 4.5 V ID (A)d - 13 - 10 Qg (Typ.) 22 nC S1 S2 S3 G4 SO-8 8D 7D 6D 5D FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Load Switches - Notebook PCs - Desktop PCs S G Top View Ordering Information: Si4835DDY-T1-E3 (Lead (Pb)-free) Si4835DDY-T1-GE3 (.

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New Product P-Channel 30-V (D-S) MOSFET Si4835DDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V 0.030 at VGS = - 4.5 V ID (A)d - 13 - 10 Qg (Typ.) 22 nC S1 S2 S3 G4 SO-8 8D 7D 6D 5D FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Load Switches - Notebook PCs - Desktop PCs S G Top View Ordering Information: Si4835DDY-T1-E3 (Lead (Pb)-free) Si4835DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH IS IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Limit - 30 ± 25 - 13 - 10.5 - 8.7a, b - 7.7a, b - 50 - 4.6 2.0a, b - 20 20 5.6 3.6 2.5a, b 1.6a, b - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. Based on TC = 25 °C. t ≤ 10 s Steady State Document Number: 69953 S09-0136-Rev. B, 02-Feb-09 Symbol RthJA RthJF Typical 39 18 Maximum 50 22 Unit °C/W www.vishay.com 1 Si4835DDY Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 25 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ - 10 V, VGS = - 10 V VGS = - 10 V, ID = - 10 A VGS = - 4.5 V, ID = - 7 A VDS = - 10 V, ID = - 10 A Ciss Coss Crss Qg VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = - 15 V, VGS = - 10 V, ID = - 10 A Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A f = 1 MHz VDD = - 15 V, RL = 3 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω VDD = - 15 V, RL = 3 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω TC = 25 °C IS = - 2 A, VGS = 0 V IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C Min. - 30 - 1.0 - 30 0.3 Typ. Max. Unit - 31 5.5 0.014 0.0245 23 - 3.0 ± 100 -1 -5 0.018 0.030 V mV/°C V nA µA A Ω S 1960 380 325 43 22 6 11 1.3 11 13 32 9 44 100 28 15 65 33 2.5 22 25 50 18 70 160 50 30 pF nC Ω ns - 0.75 28 20 13 15 - 4.6 - 50 - 1.2 45 40 A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69953 S09-0136-Rev. B, 02-Feb-09 New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted I D - Drain Current (A) ID - Drain Current (A) 60 VGS = 10 V thru 5 V 50 40 30 VGS = 4 V 20 5 4 3 2 10 0 0 0.05 VGS = 3 V 1234 VDS - Drain-to-Source Voltage (V) Output Characteristics 5 1 0 0 3000 Si4835DDY Vishay Siliconix VGS = 125 °C VGS = 25 °C VGS = - 55 °C 1234 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 5 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.04 0.03 VGS = 4.5 V 2400 1800 Ciss 0.02 0.01 VGS = 10 V 0.00 0 10 20 30 40 50 60 ID - Drain Current (A) On-Resistance vs. Drain Current 10 ID = 10 A 8 VDS = 10 V VDS = 15 V 6 VDS = 20 V 4 1200 600 Crss Coss 0 0 1.6 6 12 18 24 VDS - Drain-to-Source Voltage (V) Capacitance ID = 10 A 1.4 VGS = - 10 V 30 1.2 VGS = - 4.5 V 1.0 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage .


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