1200um Discrete GaAs pHEMT
Applications
Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless
TGF2120
...
Description
Applications
Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless
TGF2120
1200um Discrete GaAs pHEMT
Product Features
Frequency Range: DC - 20 GHz 31 dBm Typical Output Power - P1dB 11 dB Typical Gain @ 12 GHz 57% Typical PAE @ 12 GHz No Vias Technology: 0.25 um GaAs pHEMT Chip Dimensions: 0.41 x 0.54 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2120 is a discrete 1200-Micron pHEMT which operates from DC to 20 GHz. The TGF2120 is designed using TriQuint’s proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The TGF2120 typically provides 31 dBm of output power at P1dB with gain of 11 dB and 57% power-added efficiency at 1 dB compression. This performance makes the TGF2120 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
Lead-free and RoHS compliant.
Pad Configuration
Pad Dimensions
G (71um X 71um) D (71um X 71um) S (113.8um X 71um) S (113.8um X 106um)
Terminals
Gate Drain Source (outermost) Source (center)
Ordering Information
Part
TGF2120
ECCN
EAR99
Description
1200um GaAs pHEMT
Datasheet: Rev A 06-13-13 © 2013 TriQuint
- 1 of 6-
Disclaimer: Subject to change without notice
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TGF2120
1200um Discrete GaAs pHEMT
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