DatasheetsPDF.com

TGA2614-SM

TriQuint Semiconductor

S-Band High Gain LNA

Applications • Commercial and Military Radar • Satellite Communications TGA2614-SM S-Band High Gain LNA Product Featur...


TriQuint Semiconductor

TGA2614-SM

File Download Download TGA2614-SM Datasheet


Description
Applications Commercial and Military Radar Satellite Communications TGA2614-SM S-Band High Gain LNA Product Features Frequency Range: 2.7 – 3.8 GHz NF: 1.2 dB SS Gain: 17 dB OTOI: 33 dBm P1db: 19 dBm Psat: 20 dBm Bias: Vd1 = Vd2 = 6 V, Idq1 = 40 mA, Idq2 = 80 mA, Vg1 ≈ -0.65 V (typ), Vg2 ≈ −0.7 V (typ) Additional ESD Protection Package Dimensions: 5.0 x 5.0 x 1.45 mm General Description The TGA2614-SM is a S-Band Low Noise Amplifier utilizing TriQuint’s proven 0.15um pHEMT production technology. Achieving high gain and low noise figure over the 2.7-3.8 GHz bandwidth, the TGA2614-SM is ideal for serving both commercial and military radar along with various communication platforms. The TGA2614-SM typically provides <1.2 dB of Noise Figure, 19 dBm of P1dB, 33 dBm of OTOI, and small signal gain of 17 dB. Both RF ports are fully matched to 50 ohms with integrated DC blocking caps. For added handling robustness and ease of use, the TGA2614-SM is available in a low-cost, 5x5 mm ceramic, air-cavity QFN package. Lead-free and RoHS compliant Evaluation Boards are available upon request. QFN 5x5 mm 32L Functional Block Diagram 29 27 4, 5 20, 21 10 12 Pad Configuration Pad No. Symbol 1-3, 6-9, 11, 13-19, 2226, 28, 30-33 GND 4-5 RF IN 10 Vg1 12 Vg2 20-21 RF OUT 27 Vd2 29 Vd1 Ordering Information Part TGA2614-SM ECCN Description EAR99 S-Band High Gain LNA Datasheet: Rev- 09-17-13 © 2013 TriQuint - 1 of 11 - Disclaimer: Subject to change without...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)