2N3055H
15A Power Transistors
Features:
• The 2N3055H is a Silicon power base transistor for high power audio, seriespas...
2N3055H
15A Power
Transistors
Features:
The 2N3055H is a Silicon power base
transistor for high power audio, seriespass power supplies, disk-head positioners and other linear application. These devices can also be used in power switching circuits such as converters or inverters.
Higher safe operating area than 2N3055 at VCE >40V. Low saturation voltages. High power dissipation capability.
Pin 1. Base 2. Emitter Collector(Case)
Dimensions Minimum Maximum
A
38.75
39.96
B
19.28
22.23
C 7.96 9.28
D
11.18
12.19
E
25.20
26.67
F 0.92 1.09
G 1.38 1.62
H
29.90
30.40
I
16.64
17.30
J 3.88 4.36
K
10.67
11.18
Dimensions : Millimetres
NPN 2N3055H 15 Ampere
NPN Silicon
Transistors 60 Volts 115 Watts
TO-3
Maximum Ratings
Characteristic
Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Symbol VCEO VCER VCBO VEBO IC IB
PD
TJ, TSTG
Rating
60 70 100 7.0 15 7.0 115 0.657 -65 to +200
Unit
V
A W W/°C °C
Page 1
31/05/05 V1.0
2N3055H
15A Power
Transistors
Thermal Characteristics
Characteristic Thermal Resistance Junction to Case
Figure 1 - Power Derating
Symbol Rθjc
Maximum 1.52
Unit °C/W
PD, Power Dissipation (Watts)
TC, Temperature (°C)
Electrical Characteristics (TC = 25°C unless otherwise notes)
Characteristic
Symbol
Minimum
OFF Characteristics (1)
Collect...
