C2880

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 2SC2880 High Voltage Switching Applications Unit: mm High voltage: VCEO = 150 V High transition frequency: fT = 120 MHz Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1200 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg 200 150 5 50 10 500 800 150 −55 to 150 V V V mA mA mW °C °C PW-Mini JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector...