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C2982 Dataheets PDF



Part Number C2982
Manufacturers Toshiba
Logo Toshiba
Description 2SC2982
Datasheet C2982 DatasheetC2982 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications 2SC2982 Unit: mm • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A) • Low saturation voltage : VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1314 Maximum Ratings (Ta = 25.

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications 2SC2982 Unit: mm • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A) • Low saturation voltage : VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1314 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse (Note 1) Base current DC Pulse (Note 1) Collector power dissipation Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB IBP PC PC (Note 2) Tj Tstg 30 30 10 6 2 4 0.4 0.8 500 1000 150 −55 to 150 V V V A A mW °C °C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: 2SC2982 mounted on a ceramic substrate (250 mm2 × 0.8 t) JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 1 2004-07-07 2SC2982 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 30 V, IE = 0 IEBO VEB = 6 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 V (BR) EBO IE = 1 mA, IC = 0 hFE (1) (Note 3) VCE = 1 V, IC = 0.5 A hFE (2) VCE (sat) VBE fT Cob VCE = 1 V, IC = 2 A IC = 2 A, IB = 50 mA VCE = 1 V, IC = 2 A VCE = 1 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz ― ― 0.1 µA ― ― 0.1 µA 10 ― ― V 6 ―― V 140 ― 600 ― 70 140 ― ― 0.2 0.5 V ― 0.86 1.5 V ― 150 ― MHz ― 27 ― pF Note 3: hFE (1) classification A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600 Marking S Lot No. Part No. (or abbreviation code) Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 Collector current IC (A) 4.0 60 3.0 2.0 1.0 IC – VCE 25 15 Common emitter Ta = 25°C 10 IB = 5 mA 0 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage VCE (V) DC current gain hFE 2SC2982 1000 500 300 hFE – IC Ta = 100°C 25 −25 100 50 30 10 0.01 Common emitter VCE = 1 V 0.03 0.1 0.3 1 3 Collector current IC (A) 10 Collector-emitter saturation voltage VCE (sat) (V) VCE (sat) – IC 1 Common emitter 0.5 IC/IB = 40 0.3 0.1 0.05 Ta = 100°C 0.03 25 −25 0.01 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 Collector current IC (A) IC – VBE 4.0 Common emitter VCE = 1 V 3.2 2.4 Ta = 100°C 1.6 25 −25 0.8 0 0 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V) Safe Operating Area 10 5 IC max (pulse)* 3 IC max (continuous) 100 ms* 10 ms* 1 DC operation 0.5 Ta = 25°C 0.3 0.1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with .


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