Document
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2982
Storobo Flash Applications Medium Power Amplifier Applications
2SC2982
Unit: mm
• High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)
• Low saturation voltage : VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
• Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1314
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse (Note 1)
Base current
DC Pulse (Note 1)
Collector power dissipation
Junction temperature Storage temperature range
VCBO VCES VCEO VEBO
IC ICP IB IBP PC PC (Note 2)
Tj Tstg
30 30 10 6 2 4 0.4 0.8 500
1000
150 −55 to 150
V V V A
A
mW
°C °C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: 2SC2982 mounted on a ceramic substrate (250 mm2 × 0.8 t)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1 2004-07-07
2SC2982
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = 30 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
V (BR) EBO IE = 1 mA, IC = 0
hFE (1) (Note 3)
VCE = 1 V, IC = 0.5 A
hFE (2) VCE (sat)
VBE fT Cob
VCE = 1 V, IC = 2 A IC = 2 A, IB = 50 mA VCE = 1 V, IC = 2 A VCE = 1 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz
― ― 0.1 µA
― ― 0.1 µA
10 ― ―
V
6 ―― V
140 ― 600 ―
70 140 ―
― 0.2 0.5
V
― 0.86 1.5
V
― 150 ― MHz
― 27 ― pF
Note 3: hFE (1) classification A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600
Marking
S
Lot No.
Part No. (or abbreviation code) Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2 2004-07-07
Collector current IC (A)
4.0 60
3.0
2.0
1.0
IC – VCE
25 15
Common emitter Ta = 25°C
10
IB = 5 mA
0 0 0 1.0 2.0 3.0 4.0
Collector-emitter voltage VCE (V)
DC current gain hFE
2SC2982
1000
500 300
hFE – IC
Ta = 100°C 25 −25
100
50 30
10 0.01
Common emitter VCE = 1 V
0.03 0.1 0.3 1 3 Collector current IC (A)
10
Collector-emitter saturation voltage VCE (sat) (V)
VCE (sat) – IC
1 Common emitter
0.5 IC/IB = 40
0.3
0.1
0.05 Ta = 100°C
0.03
25 −25
0.01 0.01
0.03 0.1 0.3 1 3 Collector current IC (A)
10
Collector current IC (A)
IC – VBE
4.0 Common emitter
VCE = 1 V 3.2
2.4 Ta = 100°C
1.6
25 −25
0.8
0 0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
Safe Operating Area
10
5 IC max (pulse)* 3 IC max (continuous)
100 ms* 10 ms*
1 DC operation 0.5 Ta = 25°C
0.3
0.1 *: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with .