MT4S200U

MT4S200U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S200U UHF-SHF Low Noise Amplifier Application Unit: mm FEATURES Low Noise Figure :NF=1.7dB (@f=5.8GHz) High Gain:|S21e|2=9.5dB (@f=5.8GHz) Marking 4 3 P２ 12 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation VCBO VCEO VEBO IC IB Pc 8V 4V 1.2 V 35 mA 5 mA 100 mW Collector Power dissipation PC(Note1) 140 mW Junction temperature Tj 150 °C Storage temperature Range Tstg −55~150 °C Note1 : Ta=25degC (When mounted on a 1.6mm(t) glass epoxy PCB) USQ 1.Collector 2.Emitter 3.Base 4.Emitter JEDEC ― JEITA ― TOSHIBA 2-2K1E Weight: 0.006 g (typ.) 1 2006-12-26 MT4S200U Microwave Characteristics (Ta = 25°C) Characteristics Transition Frequency Insertion Gain Noise Figure Symbol Test Condition fT |S21e|2(1) |S21e|2(2) NF(1) NF(2) VCE=3V, IC=15mA VCE=3V, IC=15mA,f=2GHz VCE=3V, IC=15mA, f=5.8GHz VCE=3V, IC=5mA, f=2GHz VCE=3V, IC=5mA, f=5.8GHz Min Typ. Max Unit ⎯ 30 ⎯ GHz 15.0 17.5 ⎯ dB ⎯ 9.5 ⎯ dB ⎯ 0.75 1.0 dB ⎯ 1.7 ⎯ dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector Cut-off Current Emitter Cut-off Current DC Current Gain ICBO IEBO hFE VCB=8V, IE=0 VEB=1V, IC=0 VCE=3V, IC=15mA Output Capacitance Cob VCB=3V, IE=0, f=1MHz Reverse Transfer Capacitance Cre VCB=3V, IE=0, f=1MHz (Note...