Ordering number:EN4779
NPN Triple Diffused Planar Silicon Transistor
2SC5041
Ultrahigh-Definition CRT Display Horizonta...
Ordering number:EN4779
NPN Triple Diffused Planar Silicon
Transistor
2SC5041
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High reliability (HVP process).
· High breakdown voltage (VCBO=1600V). · Adoption of MBIT process.
· On-chip damper diode.
Package Dimensions
unit:mm 2039D
[2SC5041]
16.0 3.4
5.6 3.1
5.0 8.0 22.0
2.0
21.0 4.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat)
VCB=800V, IE=0 VCE=1600V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=5A, IB=1.25A IC=5A, IB=1.25A
2.8 2.0 1.0
123
5.45 5.45
3.5 20.4
2.0
0.6
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
Ratings 1600 800 6 7 16 3.0 60 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
800 40
max 10 1.0
130 5
1.5
Unit
µA mA V mA V V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such...