Ordering number:EN5321
NPN Triple Diffused Planar Silicon Transistor
2SC5265
Inverter-controlled Lighting Applications
...
Ordering number:EN5321
NPN Triple Diffused Planar Silicon
Transistor
2SC5265
Inverter-controlled Lighting Applications
Features
· High breakdown voltage (VCBO=1200V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.
Package Dimensions
unit:mm
2079B
10.0 3.2
[2SC5265]
4.5 2.8
3.5 7.2
16.0
0.6
16.1 3.6
0.9 1.2
0.7
14.0
0.75 1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
2.55
Conditions
Parameter
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat)
VCB=600V, IE=0 VCE=1200V, RBE=0 IC=100mA, IB=0 VEB=9V, IC=0 IC=2.0A, IB=0.4A IC=2.0A, IB=0.4A
2.55
2.4
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI (LS)
Ratings 1200 600 9 4 8 2 30 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ max
Unit
10 µA
1.0 mA
600 V
1.0 mA
1.0 V
1.5 V
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft...
