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C5201

2SC5201

Description

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications 2SC5201 Unit: mm High breakdown voltage: VCEO = 600 V Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter volta...

Toshiba

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