TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
High-Current Switching Applications
• Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A)
• High-speed switching time: tstg = 1.0 μs (typ.)
• Complementary to 2SC5175
Absolute Maximum Ratings (Ta = 25°C)
Collector power dissipation
Storage temperature range
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.5 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).