TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5098
2SC5098
VHF~UHF Band Low Noise Amplifier Applications
Un...
TOSHIBA
Transistor Silicon
NPN Epitaxial Planar Type
2SC5098
2SC5098
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 10dB (f = 2 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IB IC PC Tj Tstg
Rating
20 10 1.5 7 15 100 125 -55~125
Unit
V V V mA mA mW °C °C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-2K1A
Weight: 0.006 g (typ.)
Characteristics Transition frequency Insertion gain
Noise figure
Symbol
Test Condition
fT ïS21eï2 (1) ïS21eï2 (2)
NF (1)
NF (2)
VCE = 6 V, IC = 7 mA VCE = 6 V, IC = 7 mA, f = 1 GHz VCE = 6 V, IC = 7 mA, f = 2 GHz VCE = 6 V, IC = 3 mA, f = 1 GHz VCE = 6 V, IC = 3 mA, f = 2 GHz
Min Typ. Max Unit
7 10 ¾ GHz
12.5 7
15.5 10
¾ ¾
dB
¾ 1.3 2.5 dB
¾ 1.8 3.0
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current Emitter cut-off current
DC current gain
Output capacitance Reverse transfer capacitance
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE (Note 1)
VCE = 6 V, IC = 7 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz (Note 2) Cre
¾ ¾
50
¾ ¾
Note 1: hFE classification R: 50~100, O: 80~160 Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Typ.
¾ ¾
Max
1 1
¾ 160
0.5 0.34
0.9 0...