C5375

Ordering number:EN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features · High gain : S21e2=10dB typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. 0.425 Package Dimensions unit:mm 2059B [2SC5375] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Marking : NA Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob Cre | S21e |2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=3V, IC=7mA VCE=3V, IC=30mA VCE=3V, IC=7mA VCB=3V, f=1MHz VCB=3V, f=1MHz VCE=3V, IC=7mA, f=1GHz VCE=3V, IC=7mA, f=1GHz 0.3 0.6 0.9 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Ratings 20 10 2 100 150 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ 110 100 3 5.2 1.0 0.7 8 10 1.4 max 1.0 10 180 1.5 2.5 Unit µA µA GHz pF pF dB dB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s contr...