C5230

Ordering number:EN5046 NPN Epitaxial Planar Silicon Transistor 2SC5230 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=6.5GHz typ. Package Dimensions unit:mm 2004B [2SC5230] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C 1.3 Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain ICBO IEBO hFE fT Cob Cre | S21e |2 Noise Figure NF * : The 2SC5230 is classified by 20mA hFE as follows : 60 hFE rank : D, E, F VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=20mA VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=5V, IC=7mA, f=1GHz D 120 90 E 180 135 F 270 1.3 0.44 1 : Base 2 : Emitter 3 : Collector SANYO : NP JEDEC : TO-92 EIAJ : SC-43 Ratings 20 10 2 70 400 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ 60* 4.5 6.5 0.85 0.55 8 10.5 1.0 max 1.0 10 270* 1.3 1.8 Unit µA µA GHz pF pF dB dB Any and all SANYO products described or contained herein do not have specifications that c...