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C5087 Dataheets PDF



Part Number C5087
Manufacturers Toshiba
Logo Toshiba
Description 2SC5087
Datasheet C5087 DatasheetC5087 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 2SC5087 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 12 V .

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 2SC5087 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 12 V 3 V 40 mA 80 mA 150 mW 125 °C −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1C Weight: 0.012 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2) NF (1) NF (2) VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz Min Typ. Max Unit 5 7 ⎯ 18 9.5 13 ⎯ 1 ⎯ 1.1 ⎯ GHz ⎯ dB ⎯ ⎯ dB 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain ICBO VCB = 10 V, IE = 0 IEBO VEB = 1 V, IC = 0 hFE (Note 1) VCE = 10 V, IC = 20 mA ⎯ ⎯ 1 μA ⎯ ⎯ 1 μA 80 ⎯ 240 Output capacitance Reverse transfer capacitance Cob ⎯ 1.1 1.6 pF VCB = 10 V, IE = 0, f = 1 MHz (Note 2) Cre ⎯ 0.65 1.05 pF Note 1: hFE classification O: 80 to 160, Y: 120 to 240 Note 2: Cre is measured by 3 terminal method with capacitance bridge. Start of commercial production 1993-10 1 2014-03-01 Marking 2 1 CO Type Name hFE Rank 3 4 2SC5087 2 2014-03-01 OUTPUT CAPACITANSE Cob (pF) REVERSE TRANSFER CAPACITANCE Cre (pF) DC CURRENT GAIN hFE 1000 500 VCE = 10 V Ta = 25°C 300 hFE – IC 200 100 70 50 30 1 2 3 5 7 10 20 30 50 70 100 COLLECTOR CURRENT IC (mA) 2SC5087 10 f = 1 MHz 5 Ta = 25°C 3 Cob, Cre – VCB 2 Cob 1 Cre 0.7 0.5 0.3 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 COLLECTOR-BASE VOLTAGE VCB (V) TRANSITION FREQUENCY fT (GHz) 10 VCE = 10 V Ta = 25°C 8 fT – IC 6 4 2 0 1 3 5 7 10 30 50 70 100 COLLECTOR CURRENT IC (mA) INSERTION GAIN ⎪S21e⎪2 (dB) 16 VCE = 10 V f = 1 GHz Ta = 25°C 12 ⎪S21e⎪2 – IC 8 4 0 1 3 5 7 10 30 50 70 100 COLLECTOR CURRENT IC (mA) ⎪S21e⎪2 – f 35 VCE = 10 V 30 IC = 20 mA Ta = 25°C 20 10 0 0.1 0.3 0.5 0.7 0 3 5 7 10 FREQUENCY f (GHz) NOISE FIGURE NF (dB) 5 VCE = 10 V f = 1 GHz 4 Ta = 25°C 3 NF – IC 2 1 0 1 3 5 7 10 30 50 70 100 COLLECTOR CURRENT IC (mA) 3 2014-03-01 INSERTION GAIN ⎪S21e⎪2 (dB) 2SC5087 INSERTION GAIN ⎪S21e⎪2 (dB) COLLECTOR POWER DISSIPATION PC (mW) ⎪S21e⎪2 – VCE 16 14 12 10 8 6 4 2 IC = 20 mA f = 1 GHz 0 Ta = 25°C 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE VCE (V) PC – Ta 200 160 120 80 40 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta (°C) S-Parameter ZO = 50 Ω, Ta = 25°C VCE = 10 V, IC = 5 mA Frequency S11 S21 MHz Mag. Ang. Mag. Ang. 200 0.793 −82.4 11.923 133.4 400 0.736 −128.0 7.835 108.5 600 0.719 −152.1 5.578 94.5 800 0.701 −168.6 4.279 84.4 1000 0.698 178.9 3.451 76.6 1200 0.697 168.3 2.855 69.9 1400 0.699 159.4 2.440 64.0 1600 0.703 150.8 2.121 59.3 1800 0.713 142.9 1.876 54.5 2000 0.722 134.7 1.681 50.3 VCE = 10 V, IC = 20 mA Frequency MHz 200 400 600 800 1000 1200 S11 Mag. Ang. 0.655 −129.4 0.650 −161.5 0.660 −176.3 0.666 172.8 0.667 164.0 0.668 156.8 1400 1600 0.677 0.676 148.4 141.1 1800 2000 0.688 0.690 133.9 126.7 S21 Mag. Ang. 20.724 113.2 11.288 95.5 7.643 86.4 5.758 79.6 4.605 74.2 3.809 69.3 3.277 65.1 2.862 61.2 2.559 57.5 2.303 54.1 S12 Mag. Ang. 0.050 52.7 0.066 38.0 0.071 34.1 0.073 33.9 0.074 36.7 0.076 40.8 0.078 46.6 0.084 52.5 0.091 58.3 0.100 63.5 S12 Mag. Ang. 0.031 48.0 0.040 50.4 0.049 56.4 0.059 60.0 0.070 63.6 0.080 65.9 0.091 68.2 0.104 70.0 0.117 71.2 0.131 72.4 S22 Mag. Ang. 0.788 −36.4 0.584 −53.4 0.490 −63.5 0.445 −72.2 0.424 −80.5 0.413 −88.9 0.404 −97.3 0.401 −105.4 0.398 −112.6 0.398 −119.6 S22 Mag. Ang. 0.496 −59.6.


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