Document
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5087
2SC5087
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IB IC PC Tj Tstg
20
V
12
V
3
V
40
mA
80
mA
150
mW
125
°C
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-3J1C
Weight: 0.012 g (typ.)
Characteristics Transition frequency Insertion gain
Noise figure
Symbol
Test Condition
fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
5
7
⎯
18
9.5
13
⎯
1
⎯
1.1
⎯ GHz
⎯ dB
⎯
⎯ dB
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current Emitter cut-off current
DC current gain
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE (Note 1)
VCE = 10 V, IC = 20 mA
⎯
⎯
1
μA
⎯
⎯
1
μA
80
⎯
240
Output capacitance Reverse transfer capacitance
Cob
⎯
1.1
1.6
pF
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Cre
⎯ 0.65 1.05 pF
Note 1: hFE classification O: 80 to 160, Y: 120 to 240 Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Start of commercial production
1993-10
1
2014-03-01
Marking
2
1
CO
Type Name hFE Rank
3
4
2SC5087
2
2014-03-01
OUTPUT CAPACITANSE Cob (pF) REVERSE TRANSFER CAPACITANCE Cre (pF)
DC CURRENT GAIN hFE
1000 500
VCE = 10 V Ta = 25°C
300
hFE – IC
200
100 70 50
30
1
2 3 5 7 10
20 30 50 70 100
COLLECTOR CURRENT IC (mA)
2SC5087
10 f = 1 MHz
5 Ta = 25°C
3
Cob, Cre – VCB
2 Cob
1
Cre
0.7
0.5
0.3 0.1
0.2 0.3 0.5 0.7 1
2 3 5 7 10
COLLECTOR-BASE VOLTAGE VCB (V)
TRANSITION FREQUENCY fT (GHz)
10 VCE = 10 V Ta = 25°C
8
fT – IC
6
4
2
0
1
3 5 7 10
30 50 70 100
COLLECTOR CURRENT IC (mA)
INSERTION GAIN ⎪S21e⎪2 (dB)
16 VCE = 10 V f = 1 GHz
Ta = 25°C 12
⎪S21e⎪2 – IC
8
4
0
1
3 5 7 10
30 50 70 100
COLLECTOR CURRENT IC (mA)
⎪S21e⎪2 – f
35
VCE = 10 V
30
IC = 20 mA
Ta = 25°C
20
10
0
0.1
0.3 0.5 0.7 0
3 5 7 10
FREQUENCY f (GHz)
NOISE FIGURE NF (dB)
5 VCE = 10 V f = 1 GHz
4 Ta = 25°C
3
NF – IC
2
1
0
1
3 5 7 10
30 50 70 100
COLLECTOR CURRENT IC (mA)
3
2014-03-01
INSERTION GAIN ⎪S21e⎪2 (dB)
2SC5087
INSERTION GAIN ⎪S21e⎪2 (dB) COLLECTOR POWER DISSIPATION PC (mW)
⎪S21e⎪2 – VCE
16
14
12
10
8
6
4
2
IC = 20 mA
f = 1 GHz
0
Ta = 25°C
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE VCE (V)
PC – Ta
200
160
120
80
40
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (°C)
S-Parameter ZO = 50 Ω, Ta = 25°C
VCE = 10 V, IC = 5 mA
Frequency
S11
S21
MHz
Mag.
Ang.
Mag.
Ang.
200
0.793
−82.4
11.923
133.4
400
0.736
−128.0
7.835
108.5
600
0.719
−152.1
5.578
94.5
800
0.701
−168.6
4.279
84.4
1000
0.698
178.9
3.451
76.6
1200
0.697
168.3
2.855
69.9
1400
0.699
159.4
2.440
64.0
1600
0.703
150.8
2.121
59.3
1800
0.713
142.9
1.876
54.5
2000
0.722
134.7
1.681
50.3
VCE = 10 V, IC = 20 mA
Frequency MHz 200 400 600 800 1000 1200
S11
Mag.
Ang.
0.655
−129.4
0.650
−161.5
0.660
−176.3
0.666
172.8
0.667
164.0
0.668
156.8
1400 1600
0.677 0.676
148.4 141.1
1800 2000
0.688 0.690
133.9 126.7
S21
Mag.
Ang.
20.724
113.2
11.288
95.5
7.643
86.4
5.758
79.6
4.605
74.2
3.809
69.3
3.277
65.1
2.862
61.2
2.559
57.5
2.303
54.1
S12
Mag.
Ang.
0.050
52.7
0.066
38.0
0.071
34.1
0.073
33.9
0.074
36.7
0.076
40.8
0.078
46.6
0.084
52.5
0.091
58.3
0.100
63.5
S12
Mag.
Ang.
0.031
48.0
0.040
50.4
0.049
56.4
0.059
60.0
0.070
63.6
0.080
65.9
0.091
68.2
0.104
70.0
0.117
71.2
0.131
72.4
S22
Mag.
Ang.
0.788
−36.4
0.584
−53.4
0.490
−63.5
0.445
−72.2
0.424
−80.5
0.413
−88.9
0.404
−97.3
0.401
−105.4
0.398
−112.6
0.398
−119.6
S22
Mag.
Ang.
0.496
−59.6.