A1213

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications 2SA1213 Unit: mm Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High speed switching time: tstg = 1.0 μs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC2873 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg −50 −50 −5 −2 −0.4 500 1000 150 −55 to 150 V V V A A mW °C °C PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1980-07 1 2013-...