C4935

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4935 Power Amplifier Applications 2SC4935 Unit: mm Good hFE linearity Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VEBO IC IB PC 5V 3A 0.3 A 2 W 10 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA SC-67 temperature/current/voltage and the significant change in TOSHIBA 2-10R1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 1.7 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2010-12-21 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacit...