C4909

Ordering number:EN4410 NPN Epitaxial Planar Silicon Transistor 2SC4909 Muting Circuits, Drivers Features · High DC current gain. · On-chip bias resistance (R1=47kΩ, R2=47kΩ). · Very small-sized package permitting 2SC4909- applied sets to be made smaller and slimmer. · Small ON resistance. 0.425 Package Dimensions unit:mm 2059B [2SC4909] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Input Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO VIN IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Marking : JN Symbol Conditions ICBO ICEO IEBO hFE fT VCB=20V, IE=0 VCE=15V, IB=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=5V, IC=10mA 0.3 0.6 0.9 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Ratings 25 20 10 18 100 200 20 200 150 –55 to +150 Unit V V V V mA mA mA mW ˚C ˚C Ratings min typ 30 53 200 240 max 0.1 0.5 80 Unit µA µA µA MHz Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably ...