C4855

Ordering number:EN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current& High-Frequency Amplifier Applications Features · Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) : S21e2=7.5dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). Package Dimensions unit:mm 2110A 1.9 [2SC4855] 0.95 0.95 0.4 43 0.16 0 to 0.1 1.5 0.5 2.5 12 0.95 0.85 2.9 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE fT Cob * : The 2SC4855 is classified by 1mA hFE as follows : 60 3 120 90 4 180 135 5 270 VCB=5V, IE=0 VEB=1V, IC=0 VCE=1V, IC=1mA VCE=1V, IC=1mA VCB=1V, f=1MHz Marking : CN hFE rank : 3, 4, 5 0.8 1.1 0.5 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : CP4 Ratings 12 6 1.5 15 80 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ 60* 5 0.6 max 1.0 10 270* 1.0 Unit µA µA GHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applicatio...