Ordering number:EN3688A
NPN Triple Diffused Planar Silicon Transistor
2SC4710
2100V/10mA High-Voltage Amplifier, High-V...
Ordering number:EN3688A
NPN Triple Diffused Planar Silicon
Transistor
2SC4710
2100V/10mA High-Voltage Amplifier, High-Voltage Switching Applications
Features
· High breakdown voltage (VCEO min=2100V). · Small Cob (typical Cob=1.3pF). · Wide ASO. · High reliability (Adoption of HVP process). · Full isolation package.
Package Dimensions
unit:mm
2079B
[2SC4710]
10.0 3.2
4.5 2.8
3.5 7.2
16.0
0.6
16.1 3.6
0.9 1.2 0.7
14.0
0.75 1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
2.55
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance
ICBO IEBO hFE
fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
Cob
VCB=2100V, IE=0 VEB=4V, IC=0 VCE=5V, IC=500µA VCE=10V, IC=500µA IC=1mA, IB=200µA IC=1mA, IB=200µA IC=10µA, IE=0 IC=100µA, RBE=∞ IE=10µA, IC=0 VCB=100V, f=1MHz
2.55
2.4
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI
Ratings 2100 2100 5 10 30 2 150
–55 to +150
Unit V V V mA mA W ˚C ˚C
Ratings min typ
1...