C4686A

2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications Unit: mm High voltage: VCEO = 1200 V (max)(2SC4686A) Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage 2SC4686 2SC4686A Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 1500 1000 1200 5 50 100 25 2 10 150 −55 to 150 V V V mA mA W °C °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-03-10 Electrical Characteristics (Ta = 25°C) 2SC4686,2SC4686A Characteristics Co...