C4539

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4539 Power Amplifier Applications Power Switching Applications 2SC4539 Unit: mm · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA) · High speed switching time: tstg = 0.3 µs (typ.) · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate) · Complementary to 2SA1743 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Collector power dissipation VCBO VCEO VEBO IC IB PC PC (Note) 50 30 6 1.2 0.3 500 1000 Junction temperature Storage temperature range Tj 150 Tstg −55 to 150 Note: Mounted on ceramic substrate (250 mm2 × 0.8 t) Unit V V V A A mW mW °C °C JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 1 2002-08-13 2SC4539 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob VCB = 50 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 1.0 A IC = 700 mA, IB = 35 mA IC = 700 mA, IB = 35 mA VCE = 2 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Min Typ. Max Unit ― ― 0.1 µA ― ― 0.1 µA 30...