C4450

Ordering number:EN3101 NPN Triple Diffused Planar Silicon Transistor 2SC4450 1500V/5mA High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage. · Small Cob. · Wide ASO. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4450] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C 2.55 Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Symbol Conditions ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob VCB=1500V, IE=0 VEB=4V, IC=0 VCE=5V, IC=200µA VCE=10V, IC=200µA IC=500µA, IB=100µA IC=500µA, IB=100µA IC=10µA, IE=0 IC=100µA, RBE=∞ IE=10µA, IC=0 VCB=100V, f=1MHz 2.55 0.4 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46 Ratings 1500 1500 5 5 15 1.75 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Ratings min typ 10 6 1500 1500 5 1.5 max 1 1 60 5 2 Unit µA µA MHz V...