C4432

Ordering number:EN3184 NPN Epitaxial Planar Silicon Transistor 2SC4432 High-Frequency General-Purpose Features · High power gain. · High cutoff frequency. · Small Cob, Cre. · Very small-sized package permitting the 2SC4432- applied sets to be made small and slim. Package Dimensions unit:mm 2018B [2SC4432] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse transfer Capacitance ICBO IEBO hFE fT Cob Cre * : The 2SC4432 is classified by 5mA hFE as follows : 60 3 120 90 4 180 135 5 270 Marking : RT hFE rank : 3, 4, 5 VCB=18V, IE=0 VEB=2V, IC=0 VCE=10V, IC=5mA VCE=10V, IC=5mA VCB=10V, f=1MHz VCB=10V, f=1MHz 0.8 1.1 1 : Base 2 : Collector 3 : Emitter SANYO : CP Ratings 40 18 3 50 250 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ 60* 750 0.7 0.45 max 0.1 0.1 270* 1.2 Unit µA µA MHz pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control sys...