TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4409
Power Amplifier Applications Power switching applications
2SC4409
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) High speed switching time: tstg = 500ns (typ.) Small flat package
PC = 1~2 W (Mounted on a ceramic substrate) Complementary to 2SA1681
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