C4399

Ordering number:ENN3020 NPN Epitaxial Planar Silicon Transistor 2SC4399 High-Frequency General-Purpose Amplifier Applications Features · High power gain : PG=25dB typ (f=100MHz). · Ultrasmall-sized package permitting the 2SC4399- applied sets to be made small and slim. 0.425 Package Dimensions unit:mm 2059B [2SC4399] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse transfer Capacitance Base-to-Collector Time Constant Power Gain Noise Figure ICBO IEBO hFE fT Cre rbb'Cc PG NF VCB=10V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA VCB=6V, f=1MHz VCB=6V, IC=1mA, f=31.9MHz VCB=6V, IC=1mA, f=100MHz VCB=6V, IC=1mA, f=100MHz * : The 2SC4399 is classified by 1mA hFE as follows : Marking : F hFE rank : 3, 4, 5 Rank hFE 3 60 to 120 4 90 to 180 5 135 to 270 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Ratings 30 20 5 30 150 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ 60* 200 320 0.9 12 25 3.0 max 0.1 0.1 270* 1.2 20 Unit µA µA MHz pF ps dB dB Any and all SANYO products described or contained ...