Document
Ordering number : EN2958B
2SC4390
SANYO Semiconductors
DATA SHEET
2SC4390
NPN Epitaxial Planar Silicon Transistor
High hFE, AF Amplifier Applications
Features
• Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Large current capacity (IC=2A). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). • High VEBO (VEBO≥15V).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC ICP IB
PC
Tj Tstg
Electrical Characteristics at Ta=25°C
Conditions Mounted on a ceramic board (250mm2✕0.8mm)
Parameter
Collector Cutoff Current Emitter Cutoff Current Marking : CJ
Symbol
ICBO IEBO
Conditions
VCB=15V, IE=0A VEB=10V, IC=0A
min
Ratings 20 10 15 2 4 0.4
500 1.3 150 --55 to +150
Unit V V V A A A
mW W °C °C
Ratings typ
max
Unit
0.1 μA
0.1 μA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
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31710LA TK IM / 83004TN (PC)/D2598HA (KT)/2079MO, TS No.2958-1/4
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time
Package Dimensions unit : mm (typ) 7007B-004
2SC4390
Symbol
Conditions
hFE1 hFE2 fT Cob
VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf
VCE=2V, IC=500mA VCE=2V, IC=2A VCE=10V, IC=50mA VCB=10V, f=1MHz IC=1A, IB=20mA IC=1A, IB=20mA IC=10μA, IE=0A IC=1mA, RBE=∞ IE=10μA, IC=0A See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min 800 400
20 10 15
Ratings typ 1500
260 28
0.11 0.87
0.13 0.8 0.1
max 3200
Unit
MHz pF 0.5 V 1.2 V V V V μs μs μs
Switching Time Test Circuit
PW=20μs D.C.≤1%
INPUT
IB1 RB IB2
VR 50Ω +
100μF
OUTPUT
RL + 470μF
VBE=--5V
VCC=10V
IC=100IB1=--100IB2=700mA
Collector Current, IC -- A Collector Current, IC -- mA
IC -- VCE
2.4
2.0 2.0mA 1.8mA 1.6mA
1.6 1.4mA 1.2mA 1.0mA
1.2 0.8mA 0.6mA
0.8
0.4mA
0.4 0.2mA
0 IB=0mA
0 0.2 0.4 0.6 0.8 1.0
Collector-to-Emitter Voltage, VCE -- V ITR06668
IC -- VCE
200
100μA
90μA 80μA 70μA
160 60μA
50μA 120 40μA
30μA
80
20μA
40 10μA
0 IB=0μA
0 2 4 6 8 10
Collector-to-Emitter Voltage, VCE -- V ITR06669
No.2958-2/4
Collector Current, IC -- A
2SC4390
IC -- VBE
2.4
hFE -- IC
5
VCE=2V
VCE=2V
2.0 3 Ta=120°C 2 25°C
DC Current Gain, hFE
1.6 --40°C
1000
Ta=120°C 25°C
--40°C
1.2 7
5
0.8 3
0.4 2
Gain-Brandwidth Product, f T -- MHz
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
0 0
2
1000 7 5 3 2
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V ITR06670
f T -- IC
VCE=10V
100 7 5
3 2 10
7 5
3 2
100 7 5
3 2
2 3 5 7 100
2 3 5 7 1000 2 3
Collector Current, IC -- mA
VCE(sat) -- IC
ITR06674
IC / IB=50
25°C Ta=120°C--40°C
10 7 5
3 10
23
7
5 ICP=4A
5 7 100
2 3 5 7 1000 2 3
Collector Current, IC -- mA
ITR06672
ASO
1ms
3
2 IC=2A
1.0 7 5
3 2
10ms DC 100ms
operation
0.1
Single pulse
7 5
Mounted on a ceramic board (250mm2✕0.8mm)
3 5 7 1.0
23
5 7 10
23
Collector-to-Emitter .