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C4390 Dataheets PDF



Part Number C4390
Manufacturers Sanyo
Logo Sanyo
Description 2SC4390
Datasheet C4390 DatasheetC4390 Datasheet (PDF)

Ordering number : EN2958B 2SC4390 SANYO Semiconductors DATA SHEET 2SC4390 NPN Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications Features • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Large current capacity (IC=2A). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). • High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Coll.

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Ordering number : EN2958B 2SC4390 SANYO Semiconductors DATA SHEET 2SC4390 NPN Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications Features • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Large current capacity (IC=2A). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). • High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Mounted on a ceramic board (250mm2✕0.8mm) Parameter Collector Cutoff Current Emitter Cutoff Current Marking : CJ Symbol ICBO IEBO Conditions VCB=15V, IE=0A VEB=10V, IC=0A min Ratings 20 10 15 2 4 0.4 500 1.3 150 --55 to +150 Unit V V V A A A mW W °C °C Ratings typ max Unit 0.1 μA 0.1 μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network 31710LA TK IM / 83004TN (PC)/D2598HA (KT)/2079MO, TS No.2958-1/4 Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Package Dimensions unit : mm (typ) 7007B-004 2SC4390 Symbol Conditions hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCE=2V, IC=500mA VCE=2V, IC=2A VCE=10V, IC=50mA VCB=10V, f=1MHz IC=1A, IB=20mA IC=1A, IB=20mA IC=10μA, IE=0A IC=1mA, RBE=∞ IE=10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. min 800 400 20 10 15 Ratings typ 1500 260 28 0.11 0.87 0.13 0.8 0.1 max 3200 Unit MHz pF 0.5 V 1.2 V V V V μs μs μs Switching Time Test Circuit PW=20μs D.C.≤1% INPUT IB1 RB IB2 VR 50Ω + 100μF OUTPUT RL + 470μF VBE=--5V VCC=10V IC=100IB1=--100IB2=700mA Collector Current, IC -- A Collector Current, IC -- mA IC -- VCE 2.4 2.0 2.0mA 1.8mA 1.6mA 1.6 1.4mA 1.2mA 1.0mA 1.2 0.8mA 0.6mA 0.8 0.4mA 0.4 0.2mA 0 IB=0mA 0 0.2 0.4 0.6 0.8 1.0 Collector-to-Emitter Voltage, VCE -- V ITR06668 IC -- VCE 200 100μA 90μA 80μA 70μA 160 60μA 50μA 120 40μA 30μA 80 20μA 40 10μA 0 IB=0μA 0 2 4 6 8 10 Collector-to-Emitter Voltage, VCE -- V ITR06669 No.2958-2/4 Collector Current, IC -- A 2SC4390 IC -- VBE 2.4 hFE -- IC 5 VCE=2V VCE=2V 2.0 3 Ta=120°C 2 25°C DC Current Gain, hFE 1.6 --40°C 1000 Ta=120°C 25°C --40°C 1.2 7 5 0.8 3 0.4 2 Gain-Brandwidth Product, f T -- MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 0 0 2 1000 7 5 3 2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-to-Emitter Voltage, VBE -- V ITR06670 f T -- IC VCE=10V 100 7 5 3 2 10 7 5 3 2 100 7 5 3 2 2 3 5 7 100 2 3 5 7 1000 2 3 Collector Current, IC -- mA VCE(sat) -- IC ITR06674 IC / IB=50 25°C Ta=120°C--40°C 10 7 5 3 10 23 7 5 ICP=4A 5 7 100 2 3 5 7 1000 2 3 Collector Current, IC -- mA ITR06672 ASO 1ms 3 2 IC=2A 1.0 7 5 3 2 10ms DC 100ms operation 0.1 Single pulse 7 5 Mounted on a ceramic board (250mm2✕0.8mm) 3 5 7 1.0 23 5 7 10 23 Collector-to-Emitter .


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