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C4003 Dataheets PDF



Part Number C4003
Manufacturers Sanyo
Logo Sanyo
Description 2SC4003
Datasheet C4003 DatasheetC4003 Datasheet (PDF)

Ordering number : ENN2959B 2SC4003 2SC4003 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj.

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Ordering number : ENN2959B 2SC4003 2SC4003 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Electrical Characteristics at Ta=25°C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=300V, IE=0 Emitter Cutoff Current IEBO VEB=4V, IC=0 DC Current Gain hFE VCE=10V, IC=50mA Gain-Bandwidth Product fT VCE=30V, IC=10mA Collector-to-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 * : The 2SC4003 is classified by 50mA hFE as follows : Rank D E hFE 60 to 120 100 to 200 Ratings 400 400 5 200 400 1 10 150 --55 to +150 Unit V V V mA mA W W °C °C min 60* 400 400 5 Ratings typ max Unit 0.1 µA 0.1 µA 200* 70 MHz 0.6 V 1.0 V V V V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32505TN (PC)/82903TN (KT)/D1598HA (KT)/8219MO/6139MO, TS No.2959-1/4 Continued from preceding page. Parameter Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time Package Dimensions unit : mm 2045B 2SC4003 Symbol Cob Cre ton toff Conditions VCB=30V, f=1MHz VCB=30V, f=1MHz See specified test circuit. See specified test circuit. Ratings min typ max 4 3 0.25 5.0 Package Dimensions unit : mm 2044B Unit pF pF µs µs 6.5 5.0 2.3 4 0.5 6.5 2.3 5.0 0.5 4 0.8 5.5 1.5 2.5 7.0 1.2 5.5 1.5 7.0 0.85 0.7 0.6 12 3 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0~0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Collector Current, IC – mA Ta=70°C 25°C --30°C DC Current Gain, hFE Switching Time Test Circuit PW=20µs D.C.≤1% INPUT IB1 IB2 OUTPUT VR 50Ω RB + 100µF RL + 470µF VCC=150V VBE= --1V 10IB1= --10IB2=IC=50mA RL=3kΩ, RB=200Ω at IC=50mA IC -- VBE 120 VCE=10V 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-to-Emitter Voltage, VBE – V ITR06242 hFE -- IC 5 3 Ta=70°C 2 25°C 100 --30°C 7 5 3 2 VCE=10V 10 7 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC – mA ITR06243 No.2959-2/4 Collector-to-Emitter Saturation Voltage, VCE(sat) – V Switching Time, SW Time – µs 2SC4003 VCE(sat) -- IC 2 IC / IB=10 1.0 7 5 3 2 0.1 Ta=70°C 7 25°C, --30°C 5 3 2 7 1.0 10 7 5 3 2 2 3 5 7 10 23 5 7 100 2 Collector Current, IC – mA ITR06244 SW Time -- IC tstg 1.0 7 5 tf 3 2 Ta=25°C 0.1 VCC=150V 7 5 10IB1= --10IB2=IC 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC – mA PC -- Ta 1.2 ton 23 5 ITR06246 Collector Current, IC – mA Base-to-Emitter Saturation Voltage, VBE(sat) – V VBE(sat) -- IC 10 IC / IB=10 7 5 3 2 1.0 Ta= --30°C 7 5 25°C 3 70°C 2 7 1.0 1000 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC – mA ITR06245 ASO 10ms 1ms 5 ICP=400mA 3 IC=200mA 2 100 5 3 2 10 5 100ms DC operation(DTaC=o2p5e°raCti)on(Tc=25°C) 3 2 1.0 5 Tc=25°C 2 3 5 7 10 2 3 5 7 100 23 5 Collector-to-Emitter Voltage, VCE – V ITR06247 PC -- Tc 12 1.0 10 Collector Dissipation, PC – W 0.8 0.6 No heat sink 0.4 8 6 4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – ˚C IT09519 2 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc – ˚C IT09520 Collector Dissipation, PC – W No.2959-3/4 2SC4003 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or.


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