Document
Ordering number : ENN2959B
2SC4003
2SC4003
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
Features
• High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP
PC
Tj Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO
VCB=300V, IE=0
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
DC Current Gain
hFE VCE=10V, IC=50mA
Gain-Bandwidth Product
fT VCE=30V, IC=10mA
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=50mA, IB=5mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=50mA, IB=5mA
Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage
V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE=∞
Emitter-to-Base Breakdown Voltage
V(BR)EBO IE=10µA, IC=0
* : The 2SC4003 is classified by 50mA hFE as follows :
Rank
D
E
hFE 60 to 120 100 to 200
Ratings 400 400 5 200 400 1 10 150
--55 to +150
Unit V V V mA mA W W °C °C
min
60*
400 400
5
Ratings typ
max
Unit
0.1 µA
0.1 µA
200*
70 MHz
0.6 V
1.0 V
V
V
V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32505TN (PC)/82903TN (KT)/D1598HA (KT)/8219MO/6139MO, TS No.2959-1/4
Continued from preceding page.
Parameter
Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time
Package Dimensions unit : mm 2045B
2SC4003
Symbol
Cob Cre ton toff
Conditions
VCB=30V, f=1MHz VCB=30V, f=1MHz See specified test circuit. See specified test circuit.
Ratings min typ max
4 3 0.25 5.0
Package Dimensions unit : mm 2044B
Unit
pF pF µs µs
6.5 5.0 2.3 4 0.5
6.5 2.3
5.0 0.5 4
0.8 5.5 1.5
2.5 7.0 1.2
5.5 1.5 7.0
0.85 0.7
0.6 12 3
2.3 2.3
0.8 1.6 7.5
1.2
0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector
SANYO : TP
0.85 1
0.6
2
3
2.3 2.3
0.5
1.2 0~0.2
1 : Base 2 : Collector 3 : Emitter 4 : Collector
SANYO : TP-FA
Collector Current, IC – mA Ta=70°C
25°C --30°C
DC Current Gain, hFE
Switching Time Test Circuit
PW=20µs D.C.≤1%
INPUT
IB1 IB2
OUTPUT
VR 50Ω
RB
+ 100µF
RL
+ 470µF
VCC=150V
VBE= --1V
10IB1= --10IB2=IC=50mA RL=3kΩ, RB=200Ω at IC=50mA
IC -- VBE
120
VCE=10V
100
80
60
40
20
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE – V ITR06242
hFE -- IC
5
3
Ta=70°C
2
25°C
100 --30°C
7 5
3
2
VCE=10V
10
7 5
7 1.0
2 3 5 7 10
2 3 5 7 100 2 3
Collector Current, IC – mA
ITR06243
No.2959-2/4
Collector-to-Emitter Saturation Voltage, VCE(sat) – V
Switching Time, SW Time – µs
2SC4003
VCE(sat) -- IC
2
IC / IB=10
1.0 7 5
3
2
0.1 Ta=70°C
7
25°C, --30°C
5
3 2
7 1.0
10 7 5
3 2
2 3 5 7 10
23
5 7 100
2
Collector Current, IC – mA
ITR06244
SW Time -- IC
tstg
1.0
7 5
tf
3
2
Ta=25°C
0.1 VCC=150V
7 5
10IB1= --10IB2=IC
1.0 2 3 5 7 10 2 3 5 7 100
Collector Current, IC – mA
PC -- Ta
1.2
ton
23 5 ITR06246
Collector Current, IC – mA
Base-to-Emitter Saturation Voltage, VBE(sat) – V
VBE(sat) -- IC
10
IC / IB=10
7 5
3 2
1.0
Ta= --30°C
7
5
25°C
3
70°C
2 7 1.0
1000
2 3 5 7 10
2 3 5 7 100 2 3
Collector Current, IC – mA
ITR06245
ASO
10ms 1ms
5 ICP=400mA 3 IC=200mA
2 100
5 3 2 10
5
100ms DC operation(DTaC=o2p5e°raCti)on(Tc=25°C)
3 2
1.0
5 Tc=25°C
2 3 5 7 10
2 3 5 7 100
23 5
Collector-to-Emitter Voltage, VCE – V ITR06247
PC -- Tc
12
1.0 10
Collector Dissipation, PC – W
0.8
0.6 No heat sink
0.4
8 6 4
0.2
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C IT09519
2
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc – ˚C
IT09520
Collector Dissipation, PC – W
No.2959-3/4
2SC4003
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or.