Ordering number:EN1951B
NPN Epitaxial Planar Silicon Transistor
2SC3778
UHF Low-Noise Amplifier, Wide-Band Amplifier Ap...
Ordering number:EN1951B
NPN Epitaxial Planar Silicon
Transistor
2SC3778
UHF Low-Noise Amplifier, Wide-Band Amplifier Applications
Applications
· UHF low-noise amplifiers, wide-band amplifiers.
Features
· Small noise figure : NF=2.2dB typ (f=0.9GHz). · High power gain : MAG=14dB typ (f=0.9GHz). · High cutoff frequency : fT=5.0GHz typ.
Package Dimensions
unit:mm 2004A
[2SC3778]
JEDEC : TO-92 EIAJ : SC-43
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC IB PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance
ICBO IEBO hFE
fT Cob Cre
VCB=12V, IE=0 VEB=2V, IC=0 VCE=10V, IC=20mA VCE=10V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz
* : The 2SC3778 is classified by 20mA hFE as follows : 40 C 80 60 D 120 100 E 200
C : Collector E : Emitter B : Base SANYO : NP
Ratings 20 12 3 70 30
500 150 –55 to +150
Unit V V V mA mA
mW ˚C ˚C
Ratings min typ
40* 5.0 0.8 0.5
max 1.0 10
200*
1.1
Unit
µA µA
GHz pF pF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, ...