C3775

Ordering number:EN1948B NPN Epitaxial Planar Silicon Transistor 2SC3775 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Applications · UHF low-noise amplifiers, wide-band amplifiers. Features · Small noise figure : NF=1.5dB typ (f=0.9GHz). · High power gain : MAG=14dB typ (f=0.9GHz). · High cutoff frequency : fT=5.0GHz typ. Package Dimensions unit:mm 2018A [2SC3775] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance ICBO IEBO hFE fT Cob Cre VCB=12V, IE=0 VEB=2V, IC=0 VCE=10V, IC=20mA VCE=10V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz * : The 2SC3775 is classified by 20mA hFE as follows : (Note) Marking : OY hFE rank : 2, 3, 4 40 2 80 60 3 120 100 4 200 C : Collector B : Base E : Emitter SANYO : CP Ratings 20 12 3 100 30 250 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Ratings min typ 40* 5.0 0.9 0.6 max 1.0 10 200* Unit µA µA GHz pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support...