C3515

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 2SC3515 HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications Unit: mm · High voltage: VCBO = 300 V, VCEO = 300 V · Low saturation voltage: VCE (sat) = 0.5 V (max) · Small collector output capacitance: Cob = 3 pF (typ.) · Complementary to 2SA1384 · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg 300 300 6 100 20 500 1000 150 −55 to 150 Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 mmt) Unit V V V mA mA mW °C °C PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 1 2002-08-13 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance ICBO VCB = 300 V, IE = 0 IEBO VEB = 6 V, IC = 0 V (BR) CBO IC = 0.1 mA, IE = 0 V (BR) CEO IC = 1 mA, IB = 0 hFE (1) (Note 2) VCE = 10 V, IC = 20 mA hFE (2) VCE (sat) VBE (sat) fT Cob ...