A1392

Ordering number:EN1943A Features · Adoption of FBET process. · AF amp. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Package Dimensions unit:mm 2003A [2SA1392/2SC3383] ( ) : 2SA1392 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C JEDEC : TO-92 EIAJ : SC-43 SANYO : NF Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol Conditions ICBO IEBO hFE1 hFE2 fT VCB=(–)40V, IE=0 VEB=(–)5V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)0.1mA VCE=(–)6V, IC=(–)10mA Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Output Capacitance VCE(sat) VBE(sat) Cob IC=(–)100mA, IB=(–)10mA IC=(–)100mA, IB=(–)10mA VCB=(–)6V, f=1MHz Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 * : The 2SA1392/2SC3383 are classified by 1mA hFE as follows : 100 R 200 140 S 280 200 T 400 280 U 560 B : Base C : Collector E : Emitter Ratings (–)60 (–)50 (–)6 (–)200 (–)400 400 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Ratings min typ 100* 70 250 (200) (–)60 (–)50 (–)6...