C3330

ST 2SC3330 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group Collector Base Cutoff Current at VCB = 40 V Emitter Base Cutoff Current at VEB = 3 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 100 mA, IB =10 mA Gain Bandwidth Product at VCE = 6 V, IC = 10 mA Output Capacitance at VCB = 6 V, f = 1 MHz Noise Figure at VCE = 6 V, IE = 0.5 mA, f = 1 KHz, RS = 500 Ω Symbol VCBO VCEO VEBO IC Ptot Tj Tstg 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Value 60 50 5 200 300 150 - 55 to + 150 Unit V V V mA mW OC OC Symbol Min. R hFE O hFE Y hFE G hFE L hFE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) fT Cob NF 40 70 120 200 350 - - 60 50 5 - - - - Typ. - - - - - 0.15 200 2.5 4 Max. 80 140 240 400 700 0.1 0.1 - - - 0.3 - - - Unit µA µA V V V V MHz pF dB Dated : 07/12/2002 ...