TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3307
2SC3307
High-Speed and High-Voltage Switching Applications...
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type
2SC3307
2SC3307
High-Speed and High-Voltage Switching Applications Switching
Regulator Applications High-Speed DC-DC Converter Applications
Industrial Applications Unit: mm
Excellent switching times: tr = 1.0 μs (max), tf = 1.0 μs (max) (IC = 5 A)
High collector breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
900 800
7 10 15 3
150
150 −55 to 150
V V V
A
A W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
http://store.iiic.cc/
2009-07-17
Electrical Characteristics (Ta = 25°C)
2SC3307
Characteristics Colle...