2SC3225
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3225
Switching Applications Solenoid Drive Applications
Industrial Applications Unit: mm
• High DC current gain: hFE = 500 (min) (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 300 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperatur.