C3099

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3099 2SC3099 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure · NF = 1.7dB, |S21e|2 = 15dB (f = 500 MHz) · NF = 2.5dB, |S21e|2 = 9.5dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 20 3 30 15 150 125 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA, f = 500 MHz VCE = 10 V, IC = 10 mA, f = 1 GHz VCE = 10 V, IC = 3 mA, f = 500 MHz VCE = 10 V, IC = 3 mA, f = 1 GHz Min Typ. Max Unit ¾ 4.0 ¾ GHz ¾ 15.0 ¾ ¾ 9.5 ¾ dB ¾ 1.7 ¾ dB ¾ 2.5 ¾ Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz (Note) ¾ ¾ 30 ¾ ¾ ¾ 0.1 mA ¾ 1.0 mA ¾ 250 0.9 ¾ pF 0.6 ¾ pF Note: Cre is measured by 3 terminal method with capacitance bridge. 1 2003-0...