Ordering number:EN1010B
NPN Triple Diffused Planar Silicon Transistor
2SC3086
500V/3A Switching Regulator Applications
...
Ordering number:EN1010B
NPN Triple Diffused Planar Silicon
Transistor
2SC3086
500V/3A Switching
Regulator Applications
Features
· High breakdown voltage (VCBO≥800V). · Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm 2010C
[2SC3086]
Specifications
JEDEC : TO-220AB EIAJ : SC-46
1 : Base 2 : Collector 3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation
VCBO VCEO VEBO
IC ICP IB PC
PW≤300µs, Duty Cycle≤10% Tc=25˚C
800 500
7 3 6 1 1.75 40
Junction Temperature
Tj
150
Storage Temperature
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings min typ max
Collector Cutoff Current
ICBO VCB=500V, IE=0
Emitter Cutoff Current DC Current Gain
IEBO hFE1 hFE2
VEB=5V, IC=0 VCE=5V, IC=0.3A VCE=5V, IC=1.5A
15* 8
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=1.5A, IB=0.3A
Base-to-Emitter Saturation Voltage
VBE(sat) IC=1.5A, IB=0.3A
* : The hFE1 of the 2SC3086 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
15 L 30 20 M 40 30 N 50
10 10 50*
1.0 1.5
Unit V V V A A A W W ˚C ˚C
Unit
µA µA
V V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-s...