TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3011
2SC3011
UHF~C Band Low Noise Amplifier Applications
Unit...
TOSHIBA
Transistor Silicon
NPN Epitaxial Planar Type
2SC3011
2SC3011
UHF~C Band Low Noise Amplifier Applications
Unit: mm
· High gain: |S21e|2 = 12dB (typ.) · Low noise figure: NF = 2.3dB (typ.), f = 1 GHz · High fT: fT = 6.5 GHz
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IE PC Tj Tstg
Rating
20 7 3 30 10 150 125 -55~125
Unit
V V V mA mA mW °C °C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristics
Transition frequency Insertion gain Noise figure
Symbol
fT ïS21eï2
NF
Test Condition
VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 mA, f = 1 GHz VCE = 5 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
¾ 6.5 ¾ GHz ¾ 12 ¾ dB ¾ 2.3 ¾ dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collecter-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collecter output capacitance Reverse transfer capacitance Input capacitance
ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) Cob Cre Cib
VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 IC = 0.5 mA, IB = 0 VCE = 5 V, IC = 10 mA
IC = 10 mA, IB = 1 mA
VCB = 5 V, IE = 0, f = 1 MHz
VEB = 0, IC = 0, f = 1 MHz
Note: Cre is measured by 3-terminal method...