NCE20N60T

NCE20N60T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. VDS@Tjmax 650 V RDS(ON) 190 mΩ ID 20 A Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE20N60T TO-247 NCE20N60T Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 480 V, ID = 20 A, Tj = 125 °C Maximum Power Dissipation(Tc=25℃) Derate above 25°C Single pulse avalanche energy (Note 2) Avalanche current(Note 1) Symbol VDS VGS ID (DC) ID (DC) IDM (pluse) dv/dt PD EAS IAR TO-247 NCE20N60T 600 ±30 20 12.5 60 50 208 1.67 690 20 Unit V V A A A V/ns W W/°C mJ A Wuxi NCE Power Semiconductor Co., Ltd Page 1 http://www.ncepower.com v1.2 NCE20N60T Parameter Repetitive Avalanche energy ，tAR limited by T...