Document
NCE05N60D,NCE05N60, NCE05N60F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested
VDS@Tjmax RDS(ON) ID
650 900
5
V mΩ A
Application
● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE05N60D
TO-263
NCE05N60D
NCE05N60
TO-220
NCE05N60
NCE05N60F
TO-220F
NCE05N60F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2) Avalanche current(Note 1)
VDS VGS ID (DC) ID (DC) IDM (pluse)
dv/dt
PD
EAS IAR
NCE05N60 NCE05N60D
NCE05N60F
600
±30
5 5*
3 3*
15 15
50
50 31 0.4 0.25
130 5
Unit
V V A A A
V/ns
W W/°C
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
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NCE05N60D,NCE05N60, NCE05N60F
Parameter
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
Symbol EAR
Value
0.4
Unit mJ
Operating Junction and Storage Temperature Range
TJ,TSTG
-55...+150
* limited by maximum junction temperature
Table 2. Thermal Characteristic
Parameter
Symbol
NCE05N60 NCE05N60D
NCE05N60F
Thermal Resistance,Junction-to-Case(Maximum)
RthJC
2.5
4
Thermal Resistance,Junction-to-Ambient (Maximum)
RthJA
62
80
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
°C
Unit
°C /W °C /W
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current(Tc=25℃) Zero Gate Voltage Drain Current(Tc=125℃) Gate-Body Leakage Current Gate Threshold Voltage Drain-Source On-State Resistance Dynamic Characteristics
BVDSS IDSS IDSS IGSS VGS(th)
RDS(ON)
VGS=0V ID=250μA VDS=600V,VGS=0V VDS=600V,VGS=0V VGS=±30V,VDS=0V VDS=VGS,ID=250μA
VGS=10V, ID=3A
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Intrinsic gate resistance Switching times
gFS VDS = 20V, ID = 3A
Clss Coss Crss
VDS=50V,VGS=0V, F=1.0MHz
Qg Qgs
VDS=480V,ID=5A, VGS=10V
Qgd
RG f = 1 MHz open drain
Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Source- Drain Diode Characteristics
td(on) tr
td(off) tf
VDD=380V,ID=5A, RG=18Ω,VGS=10V
Source-drain current(Body Diode) Pulsed Source-drain current(Body Diode) Forward on voltage Reverse Recovery Time Reverse Recovery Charge Peak reverse recovery current
ISD ISDM
TC=25°C
VSD Tj=25°C,ISD=5A,VGS=0V
trr
Qrr Tj=25°C,IF=5A,di/dt=100A/μs
Irrm
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
Min Typ
600
2.5 3 850
5 520 52 4.5 12 2.2 4.5 2.6
6 2.5 55 9
1 200 1.6 15
Max
1 50 ±100 3.5 900
25
80 14 5 15 1.3
Unit
V μA μA nA V mΩ
S pF pF pF nC nC nC Ω
nS nS nS nS
A A V nS uC A
Wuxi NCE Power Semiconductor Co., Ltd
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NCE05N60D,NCE05N60, NCE05N60F
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Safe operating area for NCE05N60F
Figure3. Source-Drain Diode Forward Voltage
Figure4. Output characteristics
Figure5. Transfer characteristics
Figure6. Static drain-source on resistance
Wuxi NCE Power Semiconductor Co., Ltd
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NCE05N60D,NCE05N60, NCE05N60F
Figure7. RDS(ON) vs Junction Temperature
Figure8. BVDSS vs Junction Temperature
Figure9. Maximum ID vs Junction Temperature
Figure10. Gate charge waveforms
Figure11. Capacitance
Figure12. Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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NCE05N60D,NCE05N60, NCE05N60F
Figure13. Transient Thermal Impedance for NCE05N60F
Wuxi NCE Power Semiconductor Co., Ltd
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NCE05N60D,NCE05N60, NCE05N60F
Test circuit
1)Gate charge test circuit & Waveform
2)Switch Time Test Circuit:
3)Unclamped Inductive Switching Test Circuit & Waveforms
Wuxi NCE Power Semiconductor Co., Ltd
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NCE05N60D,NCE05N60, NCE05N60F TO-263-2L Package Information
Symbol
A A1 B b b1 c c1 D E e e1 L L1 L2 L3 V
Dimensions In Millimeters
Min.
Max.
4.470
4.670
0.000
0.150
1.170
1.370
0.710
0.910
1.170
1.370
0.310
0.530
1.170
1.3.