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NCE05N60F Dataheets PDF



Part Number NCE05N60F
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Super Junction Power MOSFET
Datasheet NCE05N60F DatasheetNCE05N60F Datasheet (PDF)

NCE05N60D,NCE05N60, NCE05N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driv.

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NCE05N60D,NCE05N60, NCE05N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested VDS@Tjmax RDS(ON) ID 650 900 5 V mΩ A Application ● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS) Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE05N60D TO-263 NCE05N60D NCE05N60 TO-220 NCE05N60 NCE05N60F TO-220F NCE05N60F TO-263 TO-220 TO-220F Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj = 125 °C Maximum Power Dissipation(Tc=25℃) Derate above 25°C Single pulse avalanche energy (Note2) Avalanche current(Note 1) VDS VGS ID (DC) ID (DC) IDM (pluse) dv/dt PD EAS IAR NCE05N60 NCE05N60D NCE05N60F 600 ±30 5 5* 3 3* 15 15 50 50 31 0.4 0.25 130 5 Unit V V A A A V/ns W W/°C mJ A Wuxi NCE Power Semiconductor Co., Ltd Page 1 http://www.ncepower.com v1.2 NCE05N60D,NCE05N60, NCE05N60F Parameter Repetitive Avalanche energy ,tAR limited by Tjmax (Note 1) Symbol EAR Value 0.4 Unit mJ Operating Junction and Storage Temperature Range TJ,TSTG -55...+150 * limited by maximum junction temperature Table 2. Thermal Characteristic Parameter Symbol NCE05N60 NCE05N60D NCE05N60F Thermal Resistance,Junction-to-Case(Maximum) RthJC 2.5 4 Thermal Resistance,Junction-to-Ambient (Maximum) RthJA 62 80 Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) °C Unit °C /W °C /W Parameter Symbol Condition On/off states Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current(Tc=25℃) Zero Gate Voltage Drain Current(Tc=125℃) Gate-Body Leakage Current Gate Threshold Voltage Drain-Source On-State Resistance Dynamic Characteristics BVDSS IDSS IDSS IGSS VGS(th) RDS(ON) VGS=0V ID=250μA VDS=600V,VGS=0V VDS=600V,VGS=0V VGS=±30V,VDS=0V VDS=VGS,ID=250μA VGS=10V, ID=3A Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Intrinsic gate resistance Switching times gFS VDS = 20V, ID = 3A Clss Coss Crss VDS=50V,VGS=0V, F=1.0MHz Qg Qgs VDS=480V,ID=5A, VGS=10V Qgd RG f = 1 MHz open drain Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Source- Drain Diode Characteristics td(on) tr td(off) tf VDD=380V,ID=5A, RG=18Ω,VGS=10V Source-drain current(Body Diode) Pulsed Source-drain current(Body Diode) Forward on voltage Reverse Recovery Time Reverse Recovery Charge Peak reverse recovery current ISD ISDM TC=25°C VSD Tj=25°C,ISD=5A,VGS=0V trr Qrr Tj=25°C,IF=5A,di/dt=100A/μs Irrm Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω Min Typ 600 2.5 3 850 5 520 52 4.5 12 2.2 4.5 2.6 6 2.5 55 9 1 200 1.6 15 Max 1 50 ±100 3.5 900 25 80 14 5 15 1.3 Unit V μA μA nA V mΩ S pF pF pF nC nC nC Ω nS nS nS nS A A V nS uC A Wuxi NCE Power Semiconductor Co., Ltd Page 2 http://www.ncepower.com v1.2 NCE05N60D,NCE05N60, NCE05N60F TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves) Figure1. Safe operating area Figure2. Safe operating area for NCE05N60F Figure3. Source-Drain Diode Forward Voltage Figure4. Output characteristics Figure5. Transfer characteristics Figure6. Static drain-source on resistance Wuxi NCE Power Semiconductor Co., Ltd Page 3 http://www.ncepower.com v1.2 NCE05N60D,NCE05N60, NCE05N60F Figure7. RDS(ON) vs Junction Temperature Figure8. BVDSS vs Junction Temperature Figure9. Maximum ID vs Junction Temperature Figure10. Gate charge waveforms Figure11. Capacitance Figure12. Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 4 http://www.ncepower.com v1.2 NCE05N60D,NCE05N60, NCE05N60F Figure13. Transient Thermal Impedance for NCE05N60F Wuxi NCE Power Semiconductor Co., Ltd Page 5 http://www.ncepower.com v1.2 NCE05N60D,NCE05N60, NCE05N60F Test circuit  1)Gate charge test circuit & Waveform 2)Switch Time Test Circuit: 3)Unclamped Inductive Switching Test Circuit & Waveforms Wuxi NCE Power Semiconductor Co., Ltd Page 6 http://www.ncepower.com v1.2 NCE05N60D,NCE05N60, NCE05N60F TO-263-2L Package Information Symbol A A1 B b b1 c c1 D E e e1 L L1 L2 L3 V Dimensions In Millimeters Min. Max. 4.470 4.670 0.000 0.150 1.170 1.370 0.710 0.910 1.170 1.370 0.310 0.530 1.170 1.3.


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