N-Channel Super Junction Power MOSFET
NCE05N60D,NCE05N60, NCE05N60F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use adva...
Description
NCE05N60D,NCE05N60, NCE05N60F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested
VDS@Tjmax RDS(ON) ID
650 900
5
V mΩ A
Application
● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE05N60D
TO-263
NCE05N60D
NCE05N60
TO-220
NCE05N60
NCE05N60F
TO-220F
NCE05N60F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2) Avalanche current(Note 1)
VDS VGS ID (DC) ID (DC) IDM (pluse)
dv/dt
PD
EAS IAR
NCE05N60 NCE05N60D
NCE05N60F
600
±30
5 5*
3 3*
15 15
50
50 31 0.4 0.25
130 5
Unit
V V A A A
V/ns
W W/°C
mJ
A
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