NCE08N50

NCE08N50D,NCE08N50,NCE08N50F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS@Tjmax RDS(ON) ID 560 600 7.8 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE08N50D TO-263 NCE08N50D NCE08N50 TO-220 NCE08N50 NCE08N50F TO-220F NCE08N50F TO-263 TO-220 TO-220F Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 400 V, ID = 7.8 A, Tj = 125 °C Maximum Power Dissipation(Tc=25℃) Derate above 25°C Single pulse avalanche energy (Note 2) Avalanche current(Note 1) VDS VGS ID (DC) ID (DC) IDM (pluse) dv/dt PD EAS IAR NCE08N50D NCE08N50 NCE08N50F 500 ±30 7.8 7.8* 5 5* 23.4 23.4* 50 83 32 0.67 0.26 230 7.8 Unit V V A A A V...