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HFS6N90
N-Channel MOSFET
Description
HFS6N90 Dec 2005 HFS6N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ȍ ID = 6.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ...
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