HFH10N80

HFH10N80 Dec 2005 HFH10N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 0.92 ȍ ID = 10 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 58 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.92 ȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 800 10.0 6.32 40.0 ρͤ͡ 920 10.0 24 4.0 PD TJ, TSTG TL Power Dissipation (TC = 25ఁ͚ ͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 240 1.92 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W/ఁ ఁ ఁ Thermal Resistance Characteristics Symbol RșJC RșCS RșJA Junction-to-Case Parameter Case-to-Sink Junction-to-Ambient Typ. -- 0.24 -- Max. 0.52 -40 Units ఁ͠Έ క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡ HFH10N80 Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(...