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HFP7N80

N-Channel MOSFET

Description

HFP7N80 June 2005 HFP7N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 1.55 ȍ ID = 7.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)...

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